ifos • paper_2 • solid_state_electronics
[UPSC IFoS 2024] Semiconductors/Solar cell (Q155, 6M)
Given that for intrinsic Si at T = 300\text{ K}, the band gap is 1\cdot 1\text{ eV} and the intrinsic carrier concentration is n_i = 1\cdot 5 \times 10^{10}\text{ cm}^{-3}. (i) Calculate the intrinsic carrier concentration at T = 450\text{ K}. Assume that the band gap at T = 450\text{ K} is 1\cdot 08\text{ eV}.
Discussion (0)
Sign in to post a solution, derivation, or discussion.
No comments yet. Start the conversation!