A transistor operating in the CE mode draws a constant base current \text{I}_{\text{B}} of 30\ \mu\text{A}. The collector current \text{I}_{\text{C}} is found to change from 3\cdot 5\text{ mA} to 3\cdot 7\text{ mA} when the collector-emitter voltage \text{V}_{\text{CE}} changes from 7\cdot 5\text{ V} to 12\cdot 5\text{ V}. Calculate the output resistance and \beta at \text{V}_{\text{CE}} = 12\cdot 5\text{ V}. What is the value of \alpha ?
Verify the following Boolean identities : (i) A + \bar{A} B = A + B (ii) \overline{\bar{A} + B} + \overline{\bar{A} + \bar{B}} = A
What is Josephson Effect ? Give an account of applications of superconductivity.
What is Meissner Effect ? Explain the validity of Meissner Effect in Type I and Type II superconductors.
An n-channel silicon JFET has donor concentration of 2 \times 10^{21}/\text{m}^3 and a channel width of 4~\mu\text{m}. If the dielectric constant of silicon is 12, find the pinch-off voltage. If the FET operates with a gate-source voltage of -2~\text{V}, what is the saturation voltage V_{\text{Dsat}}?
A superconducting material has a critical temperature of 3\cdot 7~\text{K} and a magnetic field of 0\cdot 0306~\text{tesla} at 0~\text{K}. Find the critical field at 2~\text{K}.
Explain the Meissner effect in superconductivity. Obtain an expression for London penetration depth of magnetic field for a superconductor.
Explain the use of an op-amp as a differentiator and an integrator using proper circuit diagram. Write the condition to work as good differentiator and integrator.
A transistor having \alpha = 0\cdot 975 and a reverse saturation current I_{\text{CO}} = 10~\mu\text{A} is operated in CE configuration. What is \beta for this configuration? If the base current is 250~\mu\text{A}, calculate the emitter current and the collector current.
Describe briefly the construction of an enhancement type MOSFET using a p-type silicon bar. Point out the structural difference between enhancement and depletion forms of the MOSFET.
Obtain the Boolean expression for the output Y in the given logic circuit :
Simplify the expression and show that the circuit is equivalent to an AND gate with inputs A and B.
Derive the expression for electron concentration in the conduction band of an intrinsic semiconductor.
Explain drift velocity, mobility and conductivity of an intrinsic semiconductor.
Calculate the total conductivity in an intrinsic semiconductor. How does this conductivity change with temperature ?
Estimate the current gain of an n-p-n transistor if only 0\cdot 3\% of the conduction electrons that enter the base from the emitter recombine in the base region.
A pair of transistors operates in a class B push-pull circuit with a power supply of voltage V_{\text{cc}} = 12\text{ V}. If the turns ratio of the output transformer is 2 and the load resistance R_{\text{L}} is 6\ \Omega, calculate the maximum output power and maximum dc power supplied. Hence find efficiency of the circuit. Neglect transformer winding resistance.
A small magnet is placed on the surface of a disc of normal material. Explain what happens when the disc is cooled down so that it becomes superconducting. Can this be explained from classical viewpoint if we simply treat the superconductor as a material which has zero resistivity ?
Find the output voltage of the three-input adder circuit shown below.
Draw the circuit of a phase shift oscillator using transistor. Obtain the expression for the frequency of oscillations and condition for sustained oscillations. Give necessary equivalent circuit while deriving the expression of frequency of oscillations and condition for sustained oscillations.
What is Meissner effect ? Explain perfect diamagnetism in reference to this.